| PART |
Description |
Maker |
| RJK0208DPA-00-J5A RJK0208DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FMXB-2102 |
Fast Recovery Diode with built-in SBD for temperature detection
|
Sanken electric
|
| D10SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| MM1096BD MM1096BS MM1096B MM1096BF MM1096AF MM1096 |
System Reset (with built-in watchdog timer) Monolithic MM1096 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PSIP8
|
MITSUMI ELECTRIC CO., LTD.
Mitsumi Electronics, Corp.
|
| STA406 STA406A |
NPN Darlington With built-in avalanche diode 6 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
SANKEN[Sanken electric]
|
| SLA4041 |
3 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
Sanken electric
|
| TDA7563 E-TDA7563 |
46 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM27
MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES
|
STMICROELECTRONICS
意法半导
ST Microelectronics
|
